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DUAL IGBT MODULE 100A 1200V NPT; Transistor Type:IGBT Module; Transistor Polarity:NPT; Voltage, Vces:1200V; Current Ic Continuous a Max:150A; Voltage, Vce Sat Max:2.6V; Power Dissipation:780W; Case Style:M234; Termination Type:Screw; Collector-to-Emitter Breakdown Voltage:1200V; Current Ic @ Vce Sat:100A; Current Temperature:25°C; Current, Icm Pulsed:300A; External Depth:62mm; External Length / Height:30mm; Fall Time, Tf:450ns; Full Power Rating Temperature:25°C; Max Junction Temperature, Tj:150°C; No. of Transistors:2; Power Dissipation Pd:780W; Rise Time:350ns; Voltage, Isolation:2500V; Width, External:108mm
Transistor Polarity | N Channel |
DC Collector Current | 150A |
Collector Emitter Saturation Voltage Vce(on) | 2.6V |
Power Dissipation Pd | 780W |
Collector Emitter Voltage V(br)ceo | 1.2kV |
Transistor Case Style | Module |
No. of Pins | 7Pins |
Operating Temperature Max | 150°C |
Product Range | - |
Current Ic @ Vce Sat | 100A |
Current Ic Continuous a Max | 150A |
Current Temperature | 25°C |
External Depth | 62mm |
External Length / Height | 30mm |
External Width | 108mm |
Fall Time tf | 450ns |
Full Power Rating Temperature | 25°C |
Isolation Voltage | 2.5kV |
Junction Temperature Tj Max | 150°C |
Module Configuration | Dual |
No. of Transistors | 2 |
Power Dissipation Max | 780W |
Pulsed Current Icm | 300A |
Rise Time | 350ns |
Termination Type | Screw |
Voltage Vces | 1.2kV |
polarity | N-Channel |
power_dissipation | 780 W |
rise_time | 350 ns |
mounting_style | Screw |
isolation_voltage | 2.50 kV |
rohs_status | Compliant |
pin_count | 7 |
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