• 2MBI100S-120-50
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DUAL IGBT MODULE 100A 1200V NPT; Transistor Type:IGBT Module; Transistor Polarity:NPT; Voltage, Vces:1200V; Current Ic Continuous a Max:150A; Voltage, Vce Sat Max:2.6V; Power Dissipation:780W; Case Style:M234; Termination Type:Screw; Collector-to-Emitter Breakdown Voltage:1200V; Current Ic @ Vce Sat:100A; Current Temperature:25°C; Current, Icm Pulsed:300A; External Depth:62mm; External Length / Height:30mm; Fall Time, Tf:450ns; Full Power Rating Temperature:25°C; Max Junction Temperature, Tj:150°C; No. of Transistors:2; Power Dissipation Pd:780W; Rise Time:350ns; Voltage, Isolation:2500V; Width, External:108mm

Transistor PolarityN Channel
DC Collector Current150A
Collector Emitter Saturation Voltage Vce(on)2.6V
Power Dissipation Pd780W
Collector Emitter Voltage V(br)ceo1.2kV
Transistor Case StyleModule
No. of Pins7Pins
Operating Temperature Max150°C
Product Range-
Current Ic @ Vce Sat100A
Current Ic Continuous a Max150A
Current Temperature25°C
External Depth62mm
External Length / Height30mm
External Width108mm
Fall Time tf450ns
Full Power Rating Temperature25°C
Isolation Voltage2.5kV
Junction Temperature Tj Max150°C
Module ConfigurationDual
No. of Transistors2
Power Dissipation Max780W
Pulsed Current Icm300A
Rise Time350ns
Termination TypeScrew
Voltage Vces1.2kV
polarityN-Channel
power_dissipation780 W
rise_time350 ns
mounting_styleScrew
isolation_voltage2.50 kV
rohs_statusCompliant
pin_count7
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