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DUAL IGBT MODULE 100A 1200V TRENCH; Transistor Type:IGBT Module; Transistor Polarity:Trench; Voltage, Vces:1200V; Current Ic Continuous a Max:150A; Voltage, Vce Sat Max:2.2V; Power Dissipation:540W; Case Style:M232; Termination Type:Screw; Collector-to-Emitter Breakdown Voltage:1200V; Current Ic @ Vce Sat:100A; Current Temperature:25°C; Current, Icm Pulsed:300A; External Depth:34mm; External Length / Height:30mm; Fall Time, Tf:410ns; Full Power Rating Temperature:25°C; Max Junction Temperature, Tj:150°C; No. of Transistors:2; Power Dissipation Pd:540W; Rise Time:320ns; Voltage, Isolation:2500V; Width, External:92mm
| Transistor Polarity | N Channel |
| DC Collector Current | 150A |
| Collector Emitter Saturation Voltage Vce(on) | 2.2V |
| Power Dissipation Pd | 540W |
| Collector Emitter Voltage V(br)ceo | 1.2kV |
| Transistor Case Style | Module |
| No. of Pins | 7Pins |
| Operating Temperature Max | 125°C |
| Product Range | - |
| Current Ic @ Vce Sat | 100A |
| Current Ic Continuous a Max | 150A |
| Current Temperature | 25°C |
| External Depth | 34mm |
| External Length / Height | 30mm |
| External Width | 92mm |
| Fall Time tf | 410ns |
| Full Power Rating Temperature | 25°C |
| Isolation Voltage | 2.5kV |
| Junction Temperature Tj Max | 150°C |
| Module Configuration | Dual |
| No. of Transistors | 2 |
| Operating Temperature Min | -40°C |
| Operating Temperature Range | -40°C to +125°C |
| Power Dissipation Max | 540W |
| Pulsed Current Icm | 300A |
| Rise Time | 320ns |
| Termination Type | Screw |
| Voltage Vces | 1.2kV |
| polarity | N-Channel |
| power_dissipation | 540 W |
| rise_time | 320 ns |
| mounting_style | Panel |
| isolation_voltage | 2.50 kV |
| rohs_status | Compliant |
| pin_count | 7 |
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