• 6MBI50S-120-50
  • 6MBI50S-120-50
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6-PACK IGBT MODULE 50A 1200V NPT; Transistor Type:IGBT Module; Transistor Polarity:NPT; Voltage, Vces:1200V; Current Ic Continuous a Max:75A; Voltage, Vce Sat Max:2.65V; Power Dissipation:360W; Case Style:M623; Termination Type:Screw; Collector-to-Emitter Breakdown Voltage:1200V; Current Ic @ Vce Sat:50A; Current Temperature:25°C; Current, Icm Pulsed:150A; External Depth:45mm; External Length / Height:20mm; Fall Time, Tf:450ns; Full Power Rating Temperature:25°C; Max Junction Temperature, Tj:150°C; No. of Transistors:6; Power Dissipation Pd:360W; Rise Time:350ns; Voltage, Isolation:2500V; Width, External:107mm

DC Collector Current75A
Collector Emitter Saturation Voltage Vce(on)2.65V
Power Dissipation Pd360W
Collector Emitter Voltage V(br)ceo1.2kV
Transistor Case StyleModule
No. of Pins17Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
Current Ic @ Vce Sat50A
Current Ic Continuous a Max75A
Current Temperature25°C
External Depth45mm
External Length / Height20mm
External Width107mm
Fall Time tf450ns
Full Power Rating Temperature25°C
Isolation Voltage2.5kV
Junction Temperature Tj Max150°C
Module ConfigurationSix
No. of Transistors6
Power Dissipation Max360W
Pulsed Current Icm150A
Rise Time350ns
Termination TypeScrew
Transistor PolarityN Channel
Voltage Vces1.2kV
polarityN-Channel
power_dissipation360 W
rise_time350 ns
mounting_styleScrew
isolation_voltage2.50 kV
rohs_statusCompliant
pin_count17
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