• BFP740H6327XTSA1
  • BFP740H6327XTSA1
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| Summary of Features: High gain ultra low noise RF transistor; Provides outstanding performance for a wide range of wireless applications up to 10 GHz and more; Ideal for CDMA and WLAN applications; Outstanding noise figure F = 0.5 dB at 1.8 GHz,Outstanding noise figure F = 0.85 dB at 6 GHz; High maximum stable gain :Gms = 27 dB at 1.8 GHz,; Gold metallization for extra high reliability; 150 GHz fT-Silicon Germanium technology; Pb-free (RoHS compliant) package1); Qualified according AEC Q101 | |

packagingReel
rohs_statusCompliant
reach_svhc_complianceNo SVHC
lead_free_statusLead Free
mounting_styleSurface Mount
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo4V
Transition Frequency ft44GHz
Power Dissipation Pd160mW
DC Collector Current45mA
DC Current Gain hFE250hFE
RF Transistor CaseSOT-343
No. of Pins4Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification StandardAEC-Q101
MSLMSL 1 - Unlimited
SVHCNo SVHC (12-Jan-2017)
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