• BS170
  • BS170
  • BS170
  • BS170
  • BS170
  • BS170
  • BS170
  • BS170
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This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 500 mA DC. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

Количество в упаковке2000
КорпусTO-92_BULK
Вес0.233 г
polarityN-Channel
voltage_rating_dc60.0 V
breakdown_voltage_gate_to_source-20.0 V to 20.0 V
id_continuous_drain_current500 mA
breakdown_voltage_drain_to_source60.0 V
vds_drain_to_source_voltage60.0 V
current_rating500 mA
lead_free_statusLead Free
reach_svhc_complianceNo SVHC
mounting_styleThrough Hole
packagingReel
case_packageTO-92
rds_drain_to_source_resistance_on5.00 Ω
rohs_statusCompliant
pin_count3
power_dissipation830 mW
Transistor PolarityN Channel
Continuous Drain Current Id500mA
Drain Source Voltage Vds60V
On Resistance Rds(on)1.2ohm
Rds(on) Test Voltage Vgs10V
Threshold Voltage Vgs2.1V
Power Dissipation Pd830mW
Transistor Case StyleTO-92
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (15-Jun-2015)
Current Id Max500mA
Current Temperature25°C
Device MarkingBS170
Full Power Rating Temperature25°C
Lead Spacing2.54mm
No. of Transistors1
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +150°C
Pulse Current Idm1.2A
Termination TypeThrough Hole
Voltage Vds Typ60V
Voltage Vgs Max3V
Voltage Vgs Rds on Measurement2.1V
Voltage Vgs th Max3V
Voltage Vgs th Min0.8V
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