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IGBT MODULE, 1.2KV, 100A; Transistor Pol; IGBT MODULE, 1.2KV, 100A; Transistor Polarity:N Channel; DC Collector Current:100A; Collector Emitter Voltage Vces:1.2kV; Power Dissipation Pd:560W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Min:-40°C
| polarity | N-Channel |
| pin_count | 7 |
| rohs_status | Compliant |
| mounting_style | Chassis |
| Transistor Polarity | N Channel |
| DC Collector Current | 100A |
| Collector Emitter Saturation Voltage Vce(on) | 1.2kV |
| Power Dissipation Pd | 560W |
| Collector Emitter Voltage V(br)ceo | 1.2kV |
| No. of Pins | 7Pins |
| Количество в упаковке | 1 |
| Корпус | MODULE DIP |
| Вес | 297.5 г |
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