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IGBT Module; Transistor Type:IGBT; Transistor Polarity:Dual NPN; Continuous Collector Current, Ic:100A; Collector Emitter Saturation Voltage, Vce(sat):2.1V; Power Dissipation, Pd:672W; Collector Emitter Voltage, V(br)ceo:1200V ;RoHS Compliant: Yes
| Transistor Polarity | N Channel |
| DC Collector Current | 100A |
| Collector Emitter Saturation Voltage Vce(on) | 1.2kV |
| Power Dissipation Pd | 672W |
| Collector Emitter Voltage V(br)ceo | 1.2kV |
| No. of Pins | 7Pins |
| polarity | N-Channel |
| rohs_status | Compliant |
| lead_free_status | Lead Free |
| mounting_style | Chassis |
| pin_count | 7 |
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