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SuperFET® MOSFET is Fairchild Semiconductor’s first genera-tion of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switch-ing performance, dv/dt rate and higher avalanche energy. Con-sequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
| Количество в упаковке | 50 |
| Корпус | TO-220F |
| Вес | 2.7 г |
| polarity | N-Channel |
| input_capacitance | 1.15 nF |
| voltage_rating_dc | 600 V |
| breakdown_voltage_gate_to_source | -30.0 V to 30.0 V |
| id_continuous_drain_current | 11.0 A |
| gate_charge | 40.0 nC |
| breakdown_voltage_drain_to_source | 650 V |
| vds_drain_to_source_voltage | 600 V |
| current_rating | 11.0 A |
| lead_free_status | Lead Free |
| reach_svhc_compliance | No SVHC |
| mounting_style | Through Hole |
| packaging | Tube, Rail |
| rise_time | 98.0 ns |
| rds_drain_to_source_resistance_on | 320 mΩ |
| lifecycle_status | Not Recommended for New Designs |
| rohs_status | Compliant |
| pin_count | 3 |
| power_dissipation | 36.0 W |
| Transistor Polarity | N Channel |
| Continuous Drain Current Id | 11A |
| Drain Source Voltage Vds | 600V |
| On Resistance Rds(on) | 0.32ohm |
| Rds(on) Test Voltage Vgs | 10V |
| Threshold Voltage Vgs | 5V |
| Power Dissipation Pd | 36W |
| Transistor Case Style | TO-220F |
| No. of Pins | 3Pins |
| Operating Temperature Max | 150°C |
| Product Range | - |
| Automotive Qualification Standard | - |
| MSL | - |
| SVHC | No SVHC (15-Jun-2015) |
| Current Id Max | 11A |
| Operating Temperature Min | -55°C |
| Operating Temperature Range | -55°C to +150°C |
| Pulse Current Idm | 30A |
| Termination Type | Through Hole |
| Voltage Vds Typ | 600V |
| Voltage Vgs Max | 5V |
| Voltage Vgs Rds on Measurement | 10V |
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