• FDS8858CZ
  • FDS8858CZ
  • FDS8858CZ
  • FDS8858CZ
  • FDS8858CZ
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These dual N and P-Channel enhancement mode power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Transistor PolarityN and P Channel
Continuous Drain Current Id8.6A
Drain Source Voltage Vds30V
On Resistance Rds(on)17mohm
Rds(on) Test Voltage Vgs10V
Threshold Voltage Vgs1.6V
Power Dissipation Pd2W
Transistor Case StyleSOIC
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (15-Jun-2015)
Cont Current Id N Channel 28.6A
Cont Current Id P Channel7.3A
Current Id Max8.6A
No. of Transistors2
On State Resistance N Channel Max17mohm
On State Resistance P Channel Max20.5mohm
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +150°C
PackagingCut Tape
Pulse Current Idm N Channel 220A
Pulse Current Idm P Channel20A
Termination TypeSurface Mount Device
Voltage Vds Typ30V
Voltage Vgs Max1.6V
Voltage Vgs Rds on Measurement10V
polarityN-Channel, P-Channel
id_continuous_drain_current8.60 A
power_dissipation2.00 W
vds_drain_to_source_voltage30.0 V
reach_svhc_complianceNo SVHC
lead_free_statusLead Free
mounting_styleSurface Mount
packagingCut Tape (CT)
case_packageSO
rds_drain_to_source_resistance_on17.0 mΩ, 20.5 mΩ
lifecycle_statusActive
rohs_statusCompliant
pin_count8
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