• FQP47P06
  • FQP47P06
  • FQP47P06
  • FQP47P06
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This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

polarityP-Channel
voltage_rating_dc-60.0 V
breakdown_voltage_gate_to_source-25.0 V to 25.0 V
id_continuous_drain_current47.0 A
power_dissipation160 W
vds_drain_to_source_voltage-60.0 V
current_rating-47.0 A
lead_free_statusLead Free
mounting_styleThrough Hole
packagingTube, Rail
case_packageTO-220
rds_drain_to_source_resistance_on26.0 mΩ
lifecycle_statusActive
rohs_statusCompliant
pin_count3
Transistor PolarityP Channel
Continuous Drain Current Id-47A
Drain Source Voltage Vds-60V
On Resistance Rds(on)0.021ohm
Rds(on) Test Voltage Vgs-10V
Threshold Voltage Vgs-4V
Power Dissipation Pd160W
Transistor Case StyleTO-220
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeQFET Series
Automotive Qualification Standard-
MSL-
SVHCNo SVHC (15-Jun-2015)
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