• HGTG5N120BND
  • HGTG5N120BND
  • HGTG5N120BND
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HGTG5N120BND is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter, motor control and power supplies.

Вес7.028 г
Количество в упаковке30
DC Collector Current21A
Collector Emitter Saturation Voltage Vce(on)2.7V
Power Dissipation Pd167W
Collector Emitter Voltage V(br)ceo1.2kV
Transistor Case StyleTO-247
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSL-
SVHCNo SVHC (15-Jun-2015)
Current Ic Continuous a Max21A
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +150°C
Power Dissipation Max167W
Termination TypeThrough Hole
Transistor PolarityN Channel
Transistor TypeNo Punch Through (NPT)
Voltage Vces1.2kV
КорпусTO-247AD
polarityN-Channel
breakdown_voltage_collector_to_emitter1.20 kV
voltage_rating_dc1.20 kV
power_dissipation167 W
reach_svhc_complianceNo SVHC
lead_free_statusLead Free
mounting_styleThrough Hole
packagingTube
case_packageTO-247
lifecycle_statusNot Recommended for New Designs
rohs_statusCompliant
pin_count3
current_rating21.0 A
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