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The HMC637ALP5E is a GaAs MMIC pHEMT Distributed Power Amplifier which operates between DC and 6 GHz. The amplifier provides 13 dB of gain, +44 dBm output IP3 and +29 dBm of output power at 1 dB gain compression while requiring 400 mA from a +12V supply. Gain flatness is excellent at ±0.75 dB from DC - 6 GHz making the HMC637ALP5E ideal for EW, ECM, Radar and test equipment applications. The HMC637ALP5E amplifier I/Os are internally matched to 50 Ohms and the 5x5 mm QFN package is compatible with high volume SMT assembly equipment. Applications Telecom Infrastructure Microwave Radio & VSAT Military & Space Test Instrumentation Fiber Optics
Frequency Min | 0Hz |
Frequency Max | 6GHz |
Gain | 13dB |
Noise Figure Typ | 5dB |
RF IC Case Style | LFCSP |
No. of Pins | 32Pins |
Supply Voltage Min | - |
Supply Voltage Max | - |
Operating Temperature Min | -55°C |
Operating Temperature Max | 85°C |
Packaging | Each |
Product Range | - |
Automotive Qualification Standard | - |
RoHS Phthalates Compliant | Yes |
MSL | - |
SVHC | No SVHC (07-Jul-2017) |
rohs_status | Compliant |
lead_free_status | Contains Lead |
packaging | Tray |
gain | 13.0 dB |
lifecycle_status | Active |
pin_count | 32 |
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