• IRF9130
  • IRF9130
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MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-100V; Continuous Drain Current, Id:-11A; On Resistance, Rds(on):0.3ohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:TO-204AA ;RoHS Compliant: No

polarityP-Channel
part_familyIRF9130
weight12.0 g
power_dissipation75.0 W
vds_drain_to_source_voltage-100 V
reach_svhc_complianceNo SVHC
breakdown_voltage_drain_to_source-100 V
mounting_styleThrough Hole
rds_drain_to_source_resistance_on300 mΩ
rohs_statusNon-Compliant
pin_count2
id_continuous_drain_current-11.0 A
Transistor PolarityP Channel
Continuous Drain Current Id11A
Drain Source Voltage Vds-100V
On Resistance Rds(on)300mohm
Rds(on) Test Voltage Vgs-10V
Threshold Voltage Vgs-4V
Power Dissipation Pd75W
Transistor Case StyleTO-204AA
No. of Pins2Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSL-
Avalanche Single Pulse Energy Eas81mJ
Current Iar11A
Current Id Max-11A
Current Temperature25°C
Fixing Centres30mm
Full Power Rating Temperature25°C
Junction Temperature Tj Max150°C
Junction Temperature Tj Min-55°C
Lead Spacing11mm
No. of Transistors1
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +150°C
Pulse Current Idm50A
Repetitive Avalanche Energy Max7.5mJ
Termination TypeThrough Hole
Voltage Vds Typ-100V
Voltage Vgs Max-4V
Voltage Vgs Rds on Measurement-10V
Voltage Vgs th Max-4V
Weight0.012kg
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