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MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 0.1Ohm; ID 2.5A; HD-1; PD 1.3W; VGS +/-20V; Qg 25

Количество в упаковке100
КорпусDIP4-300-2.54
Вес0.603 г
Transistor PolarityN Channel
Continuous Drain Current Id2.5A
Drain Source Voltage Vds60V
On Resistance Rds(on)100mohm
Rds(on) Test Voltage Vgs10V
Threshold Voltage Vgs4V
Power Dissipation Pd1.3W
Transistor Case StyleDIP
No. of Pins4Pins
Operating Temperature Max175°C
Product Range-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
Current Id Max2.5A
Current Temperature25°C
Full Power Rating Temperature25°C
Junction Temperature Tj Max150°C
Junction Temperature Tj Min-55°C
Lead Spacing2.54mm
No. of Transistors1
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +175°C
Pulse Current Idm19A
Row Pitch7.62mm
Voltage Vds Typ60V
Voltage Vgs Max20V
Voltage Vgs Rds on Measurement10V
polarityN-Channel
voltage_rating_dc60.0 V
id_continuous_drain_current2.50 A
breakdown_voltage_drain_to_source60.0 V
vds_drain_to_source_voltage60.0 V
current_rating2.50 A
lead_free_statusLead Free
reach_svhc_complianceNo SVHC
mounting_styleThrough Hole
packagingTube
case_packageDIP
rise_time58.0 ns
rohs_statusCompliant
pin_count4
power_dissipation1.30 W
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