• IRFD120PBF
  • IRFD120PBF
  • IRFD120PBF
  • IRFD120PBF
  • IRFD120PBF
  • IRFD120PBF
  • IRFD120PBF
  • IRFD120PBF
  • IRFD120PBF
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IRFD120PBF, Nкан 100В 1.3А HEXDIPтранзисторы полевые импортныетранзисторы полевые импортныетранзисторы полевые импортные

Количество в упаковке100
КорпусHVMDIP
Вес0.563 г
polarityN-Channel
voltage_rating_dc100 V
breakdown_voltage_gate_to_source-20.0 V to 20.0 V
id_continuous_drain_current1.30 A
breakdown_voltage_drain_to_source100 V
vds_drain_to_source_voltage100 V
current_rating1.30 A
lead_free_statusLead Free
mounting_styleThrough Hole
packagingTube
case_packageDIP
rds_drain_to_source_resistance_on270 mΩ
rise_time27.0 ns
rohs_statusCompliant
pin_count4
power_dissipation1.30 W
Transistor PolarityN Channel
Continuous Drain Current Id1.3A
Drain Source Voltage Vds100V
On Resistance Rds(on)270mohm
Rds(on) Test Voltage Vgs10V
Threshold Voltage Vgs4V
Power Dissipation Pd1.3W
Transistor Case StyleDIP
No. of Pins4Pins
Operating Temperature Max175°C
Product Range-
Automotive Qualification Standard-
MSL-
SVHCNo SVHC (07-Jul-2017)
Current Id Max1.3A
Current Temperature25°C
Device MarkingIRFD120PBF
Full Power Rating Temperature25°C
Junction Temperature Tj Max150°C
Junction Temperature Tj Min-55°C
Lead Spacing2.54mm
No. of Transistors1
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +175°C
Pulse Current Idm10.4A
Row Pitch7.62mm
Voltage Vds Typ100V
Voltage Vgs Max20V
Voltage Vgs Rds on Measurement10V
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