• IXZ210N50L
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MOSFET, N, RF, DE275; Transistor Type:RF MOSFET; Drain Source Voltage Vds:500V; Continuous Drain Current Id:10A; Power Dissipation Pd:470W; Operating Frequency Range:-; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; RF Transistor Case:DE275; No. of Pins:6; SVHC:No SVHC (19-Dec-2012); Capacitance Ciss Typ:622pF; On Resistance Rds(on):1ohm; Operating Temperature Range:-55°C to +175°C; Package / Case:DE-275; Power Dissipation Max:470W; Power Dissipation Pd:470W; Pulse Current Idm:60A; Rise Time:4ns; Threshold Voltage Vgs Typ:4.95V; Transistor Case Style:DE-275; Transistor Polarity:N Channel; Voltage Vds Typ:500V; Voltage Vgs Rds on Measurement:20V

polarityN-Channel
id_continuous_drain_current10.0 A
rohs_statusCompliant
reach_svhc_complianceNo SVHC
rise_time4.00 ns
pin_count6
Drain Source Voltage Vds500V
Continuous Drain Current Id10A
Power Dissipation Pd470W
Operating Frequency Min-
Operating Frequency Max175MHz
RF Transistor CaseDE-275
No. of Pins6Pins
Operating Temperature Max175°C
Product Range-
MSL-
SVHCNo SVHC (12-Jan-2017)
Capacitance Ciss Typ622pF
On Resistance Rds(on)1ohm
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +175°C
Power Dissipation Max470W
Pulse Current Idm60A
Rise Time4ns
Threshold Voltage Vgs4.95V
Transistor Case StyleDE-275
Transistor PolarityN Channel
Transistor TypeRF MOSFET
Voltage Vds Typ500V
Voltage Vgs Rds on Measurement20V
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