• MJD200G
  • MJD200G
  • MJD200G
  • MJD200G
Срок поставки и цена – по запросу

TRANSISTOR, RF; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:25V; Power Dissipation Pd:1.4W; DC Collector Current:5A; DC Current Gain hFE:65; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Gain Bandwidth ft Typ:65MHz; Package / Case:D-PAK; Power Dissipation Pd:1.4W

Вес0.0001 кг
Количество в упаковке1
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo25V
Transition Frequency ft65MHz
Power Dissipation Pd1.4W
DC Collector Current5A
DC Current Gain hFE65
Transistor Case StyleTO-252
No. of Pins3
Operating Temperature Max150°C
MSLMSL 1 - Unlimited
SVHCNo SVHC (17-Dec-2014)
Gain Bandwidth ft Typ65MHz
Operating Temperature Min-65°C
Operating Temperature Range-65°C to +150°C
polarityNPN, N-Channel
breakdown_voltage_collector_to_emitter25.0 V
voltage_rating_dc25.0 V
power_dissipation1.40 W
reach_svhc_complianceNo SVHC
lead_free_statusLead Free
mounting_styleSurface Mount
packagingTube
lifecycle_statusActive
rohs_statusCompliant
pin_count3
current_rating5.00 A
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