• NDS9945
  • NDS9945
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SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to provide superior switching performance and minimize on-state resistance. These devices are particularly suited for low voltage applications such as disk drive motor control, battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

polarityN-Channel, Dual N-Channel
voltage_rating_dc60.0 V
breakdown_voltage_gate_to_source-20.0 V to 20.0 V
id_continuous_drain_current3.50 A
breakdown_voltage_drain_to_source60.0 V
vds_drain_to_source_voltage60.0 V
current_rating3.50 A
lead_free_statusLead Free
reach_svhc_complianceNo SVHC
mounting_styleSurface Mount
packagingCut Tape (CT)
case_packageSO, SOIC
rds_drain_to_source_resistance_on76.0 mΩ
lifecycle_statusActive
rohs_statusCompliant
pin_count8
power_dissipation1.60 W
Transistor PolarityDual N Channel
Continuous Drain Current Id3.5A
Drain Source Voltage Vds60V
On Resistance Rds(on)100mohm
Rds(on) Test Voltage Vgs10V
Threshold Voltage Vgs1.7V
Power Dissipation Pd1.6W
Transistor Case StyleSOIC
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (15-Jun-2015)
Current Id Max3.5A
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +150°C
PackagingCut Tape
Termination TypeSurface Mount Device
Voltage Vds Typ60V
Voltage Vgs Max1.7V
Voltage Vgs Rds on Measurement10V
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