• NTE2322
  • NTE2322
  • NTE2322
  • NTE2322
  • NTE2322
  • NTE2322
  • NTE2322
  • NTE2322
Срок поставки и цена – по запросу

Bipolar Transistor; Transistor Polarity:PNP; Collector Emitter Voltage, V(br)ceo:40V; Transition Frequency Typ, ft:200MHz; Power Dissipation, Pd:650mW; DC Collector Current:600mA; DC Current Gain Max (hfe):100

Вес0.002 кг
Количество в упаковке1
Transistor PolarityPNP
Collector Emitter Voltage V(br)ceo40V
Power Dissipation Pd650mW
DC Collector Current600mA
DC Current Gain hFE100
No. of Pins14
Operating Temperature Max125°C
polarityPNP, P-Channel
breakdown_voltage_collector_to_emitter40.0 V (min)
voltage_rating_dc40.0 V
rohs_statusNon-Compliant
mounting_styleThrough Hole
case_packageTO-2018
breakdown_voltage_collector_to_base60.0 V (min)
pin_count14
current_rating600 mA
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