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Bipolar Transistor; Transistor Polarity:PNP; Collector Emitter Voltage, V(br)ceo:40V; Transition Frequency Typ, ft:200MHz; Power Dissipation, Pd:650mW; DC Collector Current:600mA; DC Current Gain Max (hfe):100
Вес | 0.002 кг |
Количество в упаковке | 1 |
Transistor Polarity | PNP |
Collector Emitter Voltage V(br)ceo | 40V |
Power Dissipation Pd | 650mW |
DC Collector Current | 600mA |
DC Current Gain hFE | 100 |
No. of Pins | 14 |
Operating Temperature Max | 125°C |
polarity | PNP, P-Channel |
breakdown_voltage_collector_to_emitter | 40.0 V (min) |
voltage_rating_dc | 40.0 V |
rohs_status | Non-Compliant |
mounting_style | Through Hole |
case_package | TO-2018 |
breakdown_voltage_collector_to_base | 60.0 V (min) |
pin_count | 14 |
current_rating | 600 mA |
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