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TRANSISTOR DUAL UM6 PNP/NPN; Transistor Type:General Purpose; Transistor Polarity:NPN / PNP; Collector-to-Emitter Breakdown Voltage:50V; Max Current Ic Continuous a:100mA; Power Dissipation:150mW; Min Hfe:68; Typ Gain Bandwidth ft:250MHz; Case Style:SOT-363; Termination Type:SMD; Operating Temperature Range:-55°C to +150°C
| Количество в упаковке | 1 |
| Корпус | SOT23-6 |
| Вес | 3.5e-05 кг |
| Transistor Polarity | NPN, PNP |
| Collector Emitter Voltage V(br)ceo | 50V |
| Power Dissipation Pd | 150mW |
| DC Collector Current | 100mA |
| DC Current Gain hFE | 68hFE |
| Transistor Case Style | SOT-363 |
| No. of Pins | 6Pins |
| Operating Temperature Max | 150°C |
| MSL | MSL 1 - Unlimited |
| SVHC | No SVHC (15-Jun-2015) |
| Current Ic Continuous a Max | 100mA |
| Gain Bandwidth ft Typ | 250MHz |
| Hfe Min | 68 |
| Module Configuration | Dual |
| Operating Temperature Min | -55°C |
| Operating Temperature Range | -55°C to +150°C |
| Transistor Type | General Purpose |
| Transition Frequency ft | 250MHz |
| Digital Transistor Polarity | NPN and PNP Complement |
| Continuous Collector Current Ic | 100mA |
| Base Input Resistor R1 | 10kohm |
| Base-Emitter Resistor R2 | 47kohm |
| Resistor Ratio, R1 / R2 | - |
| RF Transistor Case | SOT-363 |
| Product Range | UMD9N Series |
| Automotive Qualification Standard | - |
| polarity | NPN, PNP |
| current_rating | 70.0 mA |
| power_dissipation | 150 mW |
| reach_svhc_compliance | No SVHC |
| lead_free_status | Lead Free |
| mounting_style | Surface Mount |
| packaging | Reel |
| case_package | SOT-363 |
| rohs_status | Compliant |
| pin_count | 6 |
| rkg | 27 1 1 |
| photo_url | https://office.promelec.ru/upload/items/2021/09/29f/f12/GE6SOT23-40.jpg |