• HGTP12N60A4D
  • HGTP12N60A4D
  • HGTP12N60A4D
  • HGTP12N60A4D
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The HGTP12N60A4D combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.

polarityN-Channel
breakdown_voltage_collector_to_emitter600 V
voltage_rating_dc600 V
lead_free_statusLead Free
reach_svhc_complianceNo SVHC
rise_time8.00 ns
mounting_styleThrough Hole
packagingTube
case_packageTO-220
lifecycle_statusNot Recommended for New Designs
rohs_statusCompliant
pin_count3
power_dissipation167 W
current_rating54.0 A
DC Collector Current54A
Collector Emitter Saturation Voltage Vce(on)2.7V
Power Dissipation Pd167W
Collector Emitter Voltage V(br)ceo600V
Transistor Case StyleTO-220AB
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSL-
SVHCNo SVHC (15-Jun-2015)
Current Ic Continuous a Max54A
Fall Time tf18ns
Full Power Rating Temperature25°C
No. of Transistors1
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +150°C
Power Dissipation Max167W
Pulsed Current Icm96A
Rise Time8ns
Termination TypeThrough Hole
Transistor PolarityN Channel
Transistor TypeIGBT
Voltage Vces600V
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