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MOSFET, Power; P-Ch; VDSS -100V; RDS(ON) 1.2 Ohms; ID -4A; TO-220AB; PD 43W; VGS +/-20V

Количество в упаковке	50
Корпус	TO-200AB
Вес	2.697 г
Transistor Polarity	P Channel
Continuous Drain Current Id	3A
Drain Source Voltage Vds	-100V
On Resistance Rds(on)	1.2ohm
Rds(on) Test Voltage Vgs	-10V
Threshold Voltage Vgs	-4V
Power Dissipation Pd	20W
Transistor Case Style	TO-220AB
No. of Pins	3Pins
Operating Temperature Max	175°C
Product Range	-
Automotive Qualification Standard	-
MSL	-
Current Id Max	-4A
Current Temperature	25°C
Full Power Rating Temperature	25°C
Lead Spacing	2.54mm
No. of Transistors	1
Operating Temperature Min	-55°C
Operating Temperature Range	-55°C to +175°C
Pin Configuration	a
Pin Format	1 g
Pulse Current Idm	12A
Voltage Vds Typ	-100V
Voltage Vgs Max	20V
Voltage Vgs Rds on Measurement	-10V
polarity	P-Channel
voltage_rating_dc	-100 V
id_continuous_drain_current	-4.00 A
breakdown_voltage_drain_to_source	-100 V
vds_drain_to_source_voltage	-100 V
current_rating	-4.00 A
lead_free_status	Lead Free
reach_svhc_compliance	No SVHC
mounting_style	Through Hole
packaging	Tube
rise_time	27.0 ns
rohs_status	Compliant
pin_count	3
power_dissipation	20.0 W