• 2DD2661-13
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TRANSISTOR, NPN, SOT89, 0.9W; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:12V; Transition Frequency Typ ft:170MHz; Power Dissipation Pd:900mW; DC Collector Current:1A; DC Current Gain hFE:270; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-89; No. of Pins:3; Collector Emitter Voltage Vces:180mV; Current Ic Continuous a Max:1A; Gain Bandwidth ft Typ:170MHz; Hfe Min:270; Package / Case:SOT-89; Power Dissipation Pd:900mW; Termination Type:SMD; Transistor Type:Low Saturation (BISS)

Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo12V
Transition Frequency ft170MHz
Power Dissipation Pd900mW
DC Collector Current1A
DC Current Gain hFE270hFE
Transistor Case StyleSOT-89
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (15-Jan-2018)
Collector Emitter Saturation Voltage Vce(on)180mV
Current Ic Continuous a Max1A
Gain Bandwidth ft Typ170MHz
Hfe Min270
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +150°C
PackagingCut Tape
Termination TypeSurface Mount Device
Transistor TypeLow Saturation (BISS)
polarityNPN
power_dissipation900 mW
reach_svhc_complianceNo SVHC
rohs_statusCompliant
mounting_styleSurface Mount
packagingCut Tape (CT)
lifecycle_statusActive
pin_count4
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