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Dual IGBT Module 100A 1200V 600ns
| Transistor Polarity | N Channel |
| DC Collector Current | 100A |
| Collector Emitter Saturation Voltage Vce(on) | 1.75V |
| Power Dissipation Pd | 555W |
| Collector Emitter Voltage V(br)ceo | 1.2kV |
| Transistor Case Style | Module |
| No. of Pins | 7Pins |
| Operating Temperature Max | 150°C |
| Product Range | - |
| Current Ic @ Vce Sat | 100A |
| Current Ic Continuous a Max | 150A |
| Current Temperature | 25°C |
| External Depth | 62mm |
| External Length / Height | 30mm |
| External Width | 108mm |
| Fall Time tf | 450ns |
| Full Power Rating Temperature | 25°C |
| Isolation Voltage | 2.5kV |
| Junction Temperature Tj Max | 150°C |
| Module Configuration | Dual |
| No. of Transistors | 2 |
| Power Dissipation Max | 780W |
| Pulsed Current Icm | 300A |
| Rise Time | 350ns |
| Termination Type | Screw |
| Voltage Vces | 1.2kV |
| polarity | N-Channel |
| rohs_status | Compliant |
| rise_time | 350 ns |
| mounting_style | Panel |
| pin_count | 7 |
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