• 2MBI100VA-120-50
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Dual IGBT Module 100A 1200V 600ns

Transistor PolarityN Channel
DC Collector Current100A
Collector Emitter Saturation Voltage Vce(on)1.75V
Power Dissipation Pd555W
Collector Emitter Voltage V(br)ceo1.2kV
Transistor Case StyleModule
No. of Pins7Pins
Operating Temperature Max150°C
Product Range-
Current Ic @ Vce Sat100A
Current Ic Continuous a Max150A
Current Temperature25°C
External Depth62mm
External Length / Height30mm
External Width108mm
Fall Time tf450ns
Full Power Rating Temperature25°C
Isolation Voltage2.5kV
Junction Temperature Tj Max150°C
Module ConfigurationDual
No. of Transistors2
Power Dissipation Max780W
Pulsed Current Icm300A
Rise Time350ns
Termination TypeScrew
Voltage Vces1.2kV
polarityN-Channel
rohs_statusCompliant
rise_time350 ns
mounting_stylePanel
pin_count7
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