Срок доставки – по запросу | Цена – по запросу |
IGBT, MODULE, DUAL,1400A/1200V; Transistor Polarity:Dual N Channel; DC Collector Current:1.8kA; Collector Emitter Voltage Vces:1.75V; Power Dissipation Pd:7.65kW; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No. of Pins:12; MSL:-
| polarity | Dual N-Channel |
| pin_count | 12 |
| rohs_status | Compliant |
| Transistor Polarity | Dual N Channel |
| DC Collector Current | 1.8kA |
| Collector Emitter Saturation Voltage Vce(on) | 1.75V |
| Power Dissipation Pd | 7.65kW |
| Collector Emitter Voltage V(br)ceo | 1.2kV |
| Transistor Case Style | Module |
| No. of Pins | 12Pins |
| Operating Temperature Max | 150°C |
| Product Range | - |