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IGBT, DUAL, MODULE, 200A, 600V, NPT

Transistor PolarityN Channel
DC Collector Current200A
Collector Emitter Saturation Voltage Vce(on)2.45V
Power Dissipation Pd660W
Collector Emitter Voltage V(br)ceo600V
Transistor Case StyleModule
No. of Pins7Pins
Operating Temperature Max150°C
Product Range-
Current Ic @ Vce Sat200A
Current Ic Continuous a Max200A
Current Temperature25°C
External Depth34mm
External Length / Height30mm
External Width92mm
Fall Time tf480ns
Full Power Rating Temperature25°C
Isolation Voltage2.5kV
Junction Temperature Tj Max150°C
Module ConfigurationDual
No. of Transistors2
Power Dissipation Max660W
Pulsed Current Icm400A
Rise Time400ns
Termination TypeScrew
Voltage Vces600V
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