• 2MBI600U4G-120
  • 2MBI600U4G-120
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IGBT, MODULE, DUAL, 600A/1200V; Transistor Polarity:Dual N Channel; DC Collector Current:800A; Collector Emitter Voltage Vces:2.08V; Power Dissipation Pd:3.67kW; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No. of Pins:10; MSL:-

Transistor PolarityDual N Channel
DC Collector Current800A
Collector Emitter Saturation Voltage Vce(on)2.08V
Power Dissipation Pd3.67kW
Collector Emitter Voltage V(br)ceo1.2kV
Transistor Case StyleModule
No. of Pins10Pins
Operating Temperature Max150°C
Product Range-
polarityDual N-Channel
pin_count10
rohs_statusNon-Compliant
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