• 2MBI650VXA-170E-50
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IGBT, MODULE, DUAL, 650A/1700V; Transistor Polarity:Dual N Channel; DC Collector Current:900A; Collector Emitter Voltage Vces:2.1V; Power Dissipation Pd:4.15kW; Collector Emitter Voltage V(br)ceo:1.7kV; Transistor Case Style:Module; No. of Pins:10; MSL:-

Transistor PolarityDual N Channel
DC Collector Current900A
Collector Emitter Saturation Voltage Vce(on)2.1V
Power Dissipation Pd4.15kW
Collector Emitter Voltage V(br)ceo1.7kV
Transistor Case StyleModule
No. of Pins10Pins
Operating Temperature Max150°C
Product Range-
polarityDual N-Channel
pin_count10
rohs_statusCompliant
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