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IGBT, MODULE, DUAL, 650A/1700V; Transistor Polarity:Dual N Channel; DC Collector Current:900A; Collector Emitter Voltage Vces:2.1V; Power Dissipation Pd:4.15kW; Collector Emitter Voltage V(br)ceo:1.7kV; Transistor Case Style:Module; No. of Pins:10; MSL:-
| Transistor Polarity | Dual N Channel |
| DC Collector Current | 900A |
| Collector Emitter Saturation Voltage Vce(on) | 2.1V |
| Power Dissipation Pd | 4.15kW |
| Collector Emitter Voltage V(br)ceo | 1.7kV |
| Transistor Case Style | Module |
| No. of Pins | 10Pins |
| Operating Temperature Max | 150°C |
| Product Range | - |
| polarity | Dual N-Channel |
| pin_count | 10 |
| rohs_status | Compliant |
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