| Срок поставки и цена – по запросу |
IGBT, MODULE, DUAL, 800A/1200V
| Transistor Polarity | Dual N Channel |
| DC Collector Current | 1.2kA |
| Collector Emitter Saturation Voltage Vce(on) | 2.12V |
| Power Dissipation Pd | 4.8kW |
| Collector Emitter Voltage V(br)ceo | 1.2kV |
| Transistor Case Style | Module |
| No. of Pins | 10Pins |
| Operating Temperature Max | 150°C |
| Product Range | - |