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IGBT, MODULE, DUAL, 900A/1200V; Transistor Polarity:Dual N Channel; DC Collector Current:1.2kA; Collector Emitter Voltage Vces:1.75V; Power Dissipation Pd:5.1kW; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No. of Pins:10; MSL:-
| Вес | 0.85 кг |
| Количество в упаковке | 1 |
| Transistor Polarity | Dual N Channel |
| DC Collector Current | 1.2kA |
| Collector Emitter Saturation Voltage Vce(on) | 1.75V |
| Power Dissipation Pd | 5.1kW |
| Collector Emitter Voltage V(br)ceo | 1.2kV |
| Transistor Case Style | Module |
| No. of Pins | 10Pins |
| Operating Temperature Max | 150°C |
| Product Range | - |
| polarity | Dual N-Channel |
| pin_count | 10 |
| rohs_status | Compliant |
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