• 2N3583
  • 2N3583
Срок поставки и цена – по запросу

SILICON NPN TRANSISTOR; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:175V; Power Dissipation, Pd:35W; DC Collector Current:1A; DC Current Gain Max (hfe):40; Operating Temperature Range:-65°C to +200°C ;RoHS Compliant: Yes

polarityNPN
pin_count2
rohs_statusCompliant
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo175V
Transition Frequency ft20MHz
Power Dissipation Pd35W
DC Collector Current1A
DC Current Gain hFE40hFE
No. of Pins2Pins
Product Range-
Показать остальные свойства..

    Аналоги

    Ранее просмотренные товары