• 2N3637
  • 2N3637
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TRANSISTOR; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:175V; Transition Frequency Typ ft:200MHz; Power Dissipation Pd:5W; DC Collector Current:1A; DC Current Gain hFE:50; Transistor Case Style:TO-39; No. of Pins:3; Collector Emitter Voltage Vces:500mV; Current Ic Continuous a Max:1A; Gain Bandwidth ft Typ:200MHz; Hfe Min:50; Package / Case:TO-39; Power Dissipation Pd:5W; Termination Type:Through Hole

Transistor PolarityPNP
Collector Emitter Voltage V(br)ceo-175V
Transition Frequency ft200MHz
Power Dissipation Pd5W
DC Collector Current1A
DC Current Gain hFE50hFE
Transistor Case StyleTO-39
No. of Pins3Pins
Operating Temperature Max200°C
Product Range-
Automotive Qualification Standard-
MSL-
SVHCNo SVHC (07-Jul-2017)
Collector Emitter Saturation Voltage Vce(on)500mV
Current Ic Continuous a Max1A
Gain Bandwidth ft Typ200MHz
Hfe Min50
Operating Temperature Min-65°C
Operating Temperature Range-65°C to +200°C
Termination TypeThrough Hole
polarityPNP, P-Channel
breakdown_voltage_collector_to_emitter175 V
power_dissipation5.00 W
rohs_statusCompliant
mounting_styleThrough Hole
case_packageTO-39
pin_count3
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