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RF JFET; Transistor Polarity:P Channel; Power Dissipation, Pd:350mW; Package/Case:TO-92; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Breakdown Voltage, V(br)gss:20V; Current Rating:15mA ;RoHS Compliant: Yes
| Вес | 0.00025 кг |
| Количество в упаковке | 1 |
| Transistor Type | JFET |
| Breakdown Voltage Vbr | 20V |
| Zero Gate Voltage Drain Current Idss Min | -300µA |
| Zero Gate Voltage Drain Current Idss Max | -15mA |
| Gate-Source Cutoff Voltage Vgs(off) Max | 8V |
| Transistor Case Style | TO-92 |
| No. of Pins | 3 |
| Operating Temperature Max | - |
| MSL | MSL 1 - Unlimited |
| SVHC | No SVHC (17-Dec-2014) |
| Current Idss Max | 15mA |
| Current Idss Min | 300µA |
| Power Dissipation Pd | 350mW |
| Termination Type | Through Hole |
| Transistor Polarity | P Channel |
| Zero Gate Voltage Drain Current Idss | -300µA to -15mA |
| polarity | P-Channel |
| input_capacitance | 32.0 pF |
| voltage_rating_dc | -20.0 V |
| id_continuous_drain_current | 7.65 mA |
| breakdown_voltage_drain_to_source | 20.0 V |
| vds_drain_to_source_voltage | -10.0 V |
| current_rating | 15.0 mA |
| lead_free_status | Lead Free |
| reach_svhc_compliance | No SVHC |
| mounting_style | Through Hole |
| packaging | Bulk |
| case_package | TO-92 |
| lifecycle_status | Obsolete |
| rohs_status | Compliant |
| pin_count | 3 |
| power_dissipation | 350 mW |
| breakdown_voltage | 20.0 V |
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