• 2N3820
  • 2N3820
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RF JFET; Transistor Polarity:P Channel; Power Dissipation, Pd:350mW; Package/Case:TO-92; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Breakdown Voltage, V(br)gss:20V; Current Rating:15mA ;RoHS Compliant: Yes

Вес0.00025 кг
Количество в упаковке1
Transistor TypeJFET
Breakdown Voltage Vbr20V
Zero Gate Voltage Drain Current Idss Min-300µA
Zero Gate Voltage Drain Current Idss Max-15mA
Gate-Source Cutoff Voltage Vgs(off) Max8V
Transistor Case StyleTO-92
No. of Pins3
Operating Temperature Max-
MSLMSL 1 - Unlimited
SVHCNo SVHC (17-Dec-2014)
Current Idss Max15mA
Current Idss Min300µA
Power Dissipation Pd350mW
Termination TypeThrough Hole
Transistor PolarityP Channel
Zero Gate Voltage Drain Current Idss-300µA to -15mA
polarityP-Channel
input_capacitance32.0 pF
voltage_rating_dc-20.0 V
id_continuous_drain_current7.65 mA
breakdown_voltage_drain_to_source20.0 V
vds_drain_to_source_voltage-10.0 V
current_rating15.0 mA
lead_free_statusLead Free
reach_svhc_complianceNo SVHC
mounting_styleThrough Hole
packagingBulk
case_packageTO-92
lifecycle_statusObsolete
rohs_statusCompliant
pin_count3
power_dissipation350 mW
breakdown_voltage20.0 V
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