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TRANSISTOR, PNP, TO-39; Transistor Type:Bipolar; Transistor Polarity:PNP; Collector-to-Emitter Breakdown Voltage:80V; Current Ic Continuous a Max:1A; Voltage, Vce Sat Max:-0.15V; Power Dissipation:0.8W; Min Hfe:100; ft, Typ:150MHz; Case Style:TO-39; Termination Type:Through Hole; Current Ic Max:1A; Current Ic hFE:100mA; No. of Pins:3; Power, Ptot:800mW; Voltage, Vcbo:80V; ft, Min:150MHz
| polarity | PNP, P-Channel |
| breakdown_voltage_collector_to_emitter | 80.0 V |
| power_dissipation | 800 mW |
| reach_svhc_compliance | No SVHC |
| rohs_status | Compliant |
| case_package | TO-39 |
| pin_count | 3 |
| Transistor Polarity | PNP |
| Collector Emitter Voltage V(br)ceo | -80V |
| Transition Frequency ft | - |
| Power Dissipation Pd | 800mW |
| DC Collector Current | -1A |
| DC Current Gain hFE | 40hFE |
| Transistor Case Style | TO-39 |
| No. of Pins | 3Pins |
| Operating Temperature Max | 200°C |
| Product Range | - |
| Automotive Qualification Standard | - |
| MSL | - |
| SVHC | No SVHC (07-Jul-2017) |
| Collector Emitter Saturation Voltage Vce(on) | -150mV |
| Continuous Collector Current Ic Max | 1A |
| Current Ic Continuous a Max | 1A |
| Current Ic hFE | 100mA |
| Gain Bandwidth ft Min | 150MHz |
| Gain Bandwidth ft Typ | 150MHz |
| Hfe Min | 100 |
| Operating Temperature Min | -65°C |
| Operating Temperature Range | -65°C to +200°C |
| Power Dissipation Ptot Max | 800mW |
| Voltage Vcbo | 80V |
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