polarity | P-Channel |
voltage_rating_dc | -40.0 V |
id_continuous_drain_current | 10.0 mA |
power_dissipation | 350 mW |
vds_drain_to_source_voltage | 40.0 V |
current_rating | 10.0 mA |
lead_free_status | Lead Free |
reach_svhc_compliance | No SVHC |
mounting_style | Through Hole |
packaging | Bulk |
case_package | TO-92 |
lifecycle_status | Obsolete |
rohs_status | Compliant |
pin_count | 3 |
breakdown_voltage | 40.0 V |
Вес | 0.0002 кг |
Количество в упаковке | 1 |
Transistor Type | JFET |
Breakdown Voltage Vbr | 40V |
Zero Gate Voltage Drain Current Idss Min | -4mA |
Zero Gate Voltage Drain Current Idss Max | -16mA |
Gate-Source Cutoff Voltage Vgs(off) Max | 6V |
Transistor Case Style | TO-92 |
No. of Pins | 3 |
Operating Temperature Max | 150°C |
MSL | MSL 1 - Unlimited |
SVHC | No SVHC (15-Jun-2015) |
Application Code | LNA |
Current Idss Max | 16mA |
Current Idss Min | 4mA |
Current Ig | 10mA |
Device Marking | 2N5462 |
Drain Source Voltage Vds | 40V |
Forward Transconductance Gfs Max | 6mA/V |
Full Power Rating Temperature | 25°C |
Gfs Min | 2mA/V |
No. of Transistors | 1 |
Operating Temperature Min | -55°C |
Operating Temperature Range | -55°C to +150°C |
Pin Configuration | n |
Pin Format | n |
Power Dissipation Pd | 350mW |
Power Dissipation Ptot Max | 310mW |
Termination Type | Through Hole |
Transistor Polarity | P Channel |
Zero Gate Voltage Drain Current Idss | -4mA to -16mA |