• 2N7000
  • 2N7000
  • 2N7000
  • 2N7000
  • 2N7000
  • 2N7000
  • 2N7000
  • 2N7000
  • 2N7000
  • 2N7000
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This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

polarityN-Channel
voltage_rating_dc60.0 V
breakdown_voltage_gate_to_source-20.0 V to 20.0 V
id_continuous_drain_current200 mA
breakdown_voltage_drain_to_source60.0 V
vds_drain_to_source_voltage60.0 V
current_rating200 mA
lead_free_statusLead Free
reach_svhc_complianceNo SVHC
mounting_styleThrough Hole
packagingBulk
case_packageTO-92
rds_drain_to_source_resistance_on5.30 Ω
rohs_statusCompliant
pin_count3
power_dissipation400 mW
Transistor PolarityN Channel
Continuous Drain Current Id200mA
Drain Source Voltage Vds60V
On Resistance Rds(on)1.2ohm
Rds(on) Test Voltage Vgs10V
Threshold Voltage Vgs2.1V
Power Dissipation Pd400mW
Transistor Case StyleTO-92
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (15-Jun-2015)
Current Id Max200mA
Current Temperature25°C
Device Marking2N7000
Full Power Rating Temperature25°C
Lead Spacing1.27mm
No. of Transistors1
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +150°C
Pulse Current Idm500mA
Voltage Vds Typ60V
Voltage Vgs Max2.1V
Voltage Vgs Rds on Measurement10V
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