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This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
polarity | N-Channel |
voltage_rating_dc | 60.0 V |
breakdown_voltage_gate_to_source | -20.0 V to 20.0 V |
id_continuous_drain_current | 200 mA |
breakdown_voltage_drain_to_source | 60.0 V |
vds_drain_to_source_voltage | 60.0 V |
current_rating | 200 mA |
lead_free_status | Lead Free |
reach_svhc_compliance | No SVHC |
mounting_style | Through Hole |
packaging | Bulk |
case_package | TO-92 |
rds_drain_to_source_resistance_on | 5.30 Ω |
rohs_status | Compliant |
pin_count | 3 |
power_dissipation | 400 mW |
Transistor Polarity | N Channel |
Continuous Drain Current Id | 200mA |
Drain Source Voltage Vds | 60V |
On Resistance Rds(on) | 1.2ohm |
Rds(on) Test Voltage Vgs | 10V |
Threshold Voltage Vgs | 2.1V |
Power Dissipation Pd | 400mW |
Transistor Case Style | TO-92 |
No. of Pins | 3Pins |
Operating Temperature Max | 150°C |
Product Range | - |
Automotive Qualification Standard | - |
MSL | MSL 1 - Unlimited |
SVHC | No SVHC (15-Jun-2015) |
Current Id Max | 200mA |
Current Temperature | 25°C |
Device Marking | 2N7000 |
Full Power Rating Temperature | 25°C |
Lead Spacing | 1.27mm |
No. of Transistors | 1 |
Operating Temperature Min | -55°C |
Operating Temperature Range | -55°C to +150°C |
Pulse Current Idm | 500mA |
Voltage Vds Typ | 60V |
Voltage Vgs Max | 2.1V |
Voltage Vgs Rds on Measurement | 10V |
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