• 2SK1119(F)
Срок поставки и цена – по запросу

MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:1kV; On Resistance Rds(on):3.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.5V; Power Dissipation Pd:100W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:4A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:100W; Power Dissipation Pd:100W; Pulse Current Idm:12A; Termination Type:Through Hole; Voltage Vds Typ:1kV; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

Вес0.002 кг
Количество в упаковке1
Transistor PolarityN Channel
Continuous Drain Current Id4A
Drain Source Voltage Vds1kV
On Resistance Rds(on)3.8ohm
Rds(on) Test Voltage Vgs10V
Threshold Voltage Vgs3.5V
Power Dissipation Pd100W
Transistor Case StyleTO-220AB
No. of Pins3
Operating Temperature Max-
MSL-
Current Id Max4A
Current Temperature25°C
Full Power Rating Temperature25°C
Lead Spacing2.54mm
No. of Transistors1
Pulse Current Idm12A
Termination TypeThrough Hole
Voltage Vds Typ1kV
Voltage Vgs Max20V
Voltage Vgs Rds on Measurement10V
polarityN-Channel
id_continuous_drain_current4.00 A
power_dissipation100 W
lead_free_statusLead Free
mounting_styleThrough Hole
rohs_statusCompliant
pin_count3
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