• 2SK2607(F)
Срок поставки и цена – по запросу

MOSFET, N, TO-3P; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:800V; On Resistance Rds(on):1.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:150W; Transistor Case Style:TO-3P; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:9A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:5.45mm; No. of Transistors:1; Package / Case:TO-3P; Power Dissipation Pd:150W; Power Dissipation Pd:150W; Pulse Current Idm:27A; Termination Type:Through Hole; Voltage Vds Typ:800V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V

Вес0.006 кг
Количество в упаковке1
Transistor PolarityN Channel
Continuous Drain Current Id9A
Drain Source Voltage Vds800V
On Resistance Rds(on)1.2ohm
Rds(on) Test Voltage Vgs10V
Threshold Voltage Vgs4V
Power Dissipation Pd150W
Transistor Case StyleTO-3P
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
MSL-
Current Id Max9A
Current Temperature25°C
Full Power Rating Temperature25°C
Lead Spacing5.45mm
No. of Transistors1
Pulse Current Idm27A
Termination TypeThrough Hole
Voltage Vds Typ800V
Voltage Vgs Max30V
Voltage Vgs Rds on Measurement10V
polarityN-Channel
id_continuous_drain_current9.00 A
power_dissipation150 W
lead_free_statusLead Free
mounting_styleThrough Hole
rohs_statusCompliant
pin_count3
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