• 2SK2613(F)
Срок поставки и цена – по запросу

MOSFET, N CH, 8A, 1000V, TO3P; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:1kV; On Resistance Rds(on):1.7ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:150W; Transistor Case Style:TO-3P; No. of Pins:3; Current Id Max:8A; Package / Case:TO-3P; Power Dissipation Pd:150W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:1kV; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V

polarityN-Channel
id_continuous_drain_current8.00 A
power_dissipation150 W
lead_free_statusLead Free
mounting_styleThrough Hole
rohs_statusCompliant
pin_count3
Transistor PolarityN Channel
Continuous Drain Current Id8A
Drain Source Voltage Vds1kV
On Resistance Rds(on)1.7ohm
Rds(on) Test Voltage Vgs10V
Threshold Voltage Vgs4V
Power Dissipation Pd150W
Transistor Case StyleTO-3P
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSL-
Current Id Max8A
Termination TypeThrough Hole
Transistor TypePower MOSFET
Voltage Vds Typ1kV
Voltage Vgs Max30V
Voltage Vgs Rds on Measurement10V
Показать остальные свойства..