• MMBT5551
  • MMBT5551
  • MMBT5551
  • MMBT5551
Срок поставки и цена – по запросу

Transistor; Transistor Type:Bipolar; Transistor Polarity:NPN; Power Dissipation, Pd:0.35W; DC Current Gain Min (hfe):80; Package/Case:SOT-323; C-E Breakdown Voltage:160V; DC Collector Current:0.6A; Leaded Process Compatible:Yes ;RoHS Compliant: Yes

polarityNPN, N-Channel
breakdown_voltage_collector_to_emitter160 V
voltage_rating_dc160 V
power_dissipation350 mW
reach_svhc_complianceNo SVHC
lead_free_statusLead Free
mounting_styleSurface Mount
packagingCut Tape (CT)
case_packageSOT-23
lifecycle_statusActive
rohs_statusCompliant
pin_count3
current_rating600 mA
Количество в упаковке1
Вес0.034 г
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo160V
Transition Frequency ft100MHz
Power Dissipation Pd350mW
DC Collector Current600mA
DC Current Gain hFE250hFE
Transistor Case StyleSOT-23
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (15-Jun-2015)
Continuous Collector Current Ic600mA
Current Ic hFE250mA
DC Current Gain Max (hfe)250
Gain Bandwidth ft Typ300MHz
Hfe Min80
Noise Figure Typ8dB
Operating Temperature Min-55°C
PackagingCut Tape
Power Dissipation Ptot Max350mW
RF Transistor CaseSOT-23
Termination TypeSurface Mount Device
Test Frequency15.7kHz
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