• BCR112E6327HTSA1
  • BCR112E6327HTSA1
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NPN Silicon Digital Transistor | Summary of Features: Switching circuit, inverter, interface circuit, driver circuit; Built in bias resistor (R1=4.7k, R2=4.7k); Pb-free (RoHS compliant) package; Qualified according AEC Q101 | |

current_rating100 mA
rohs_statusCompliant
voltage_rating_dc50.0 V
lead_free_statusLead Free
mounting_styleSurface Mount
packagingCut Tape (CT), Tape & Reel (TR)
case_packageTO-236, SC-59, SOT-23-3
pin_count3
Количество в упаковке3000
КорпусPG-SOT23-3
Вес0.033 г
Transistor Polarity-
Collector Emitter Voltage V(br)ceo50V
Transition Frequency ft-
Power Dissipation Pd-
DC Collector Current-
DC Current Gain hFE-
Transistor Case Style-
No. of Pins3Pins
Operating Temperature Max-
Product Range-
Automotive Qualification StandardAEC-Q101
MSLMSL 1 - Unlimited
SVHCNo SVHC (12-Jan-2017)
Base Input Resistor R14.7kohm
Base-Emitter Resistor R24.7kohm
Continuous Collector Current Ic100mA
RF Transistor CaseSOT-23
Resistor Ratio, R1 / R21(Ratio)
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