• BCR523E6327HTSA1
  • BCR523E6327HTSA1
  • BCR523E6327HTSA1
  • BCR523E6327HTSA1
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NPN Silicon Digital Transistors | Summary of Features: Switching circuit, inverter circuit, driver circuit; Built in bias resistor (R1= 1 k, R2= 10 k); BCR523U: Two (galvanic) internal isolated transistors with good matching in one package; Pb-free (RoHS compliant) package; Qualified according AEC Q101 | |

polarityNPN
reach_svhc_complianceNo SVHC
voltage_rating_dc50.0 V
rohs_statusCompliant
current_rating500 mA
lead_free_statusLead Free
mounting_styleSurface Mount
packagingCut Tape (CT), Tape & Reel (TR)
case_packageTO-236, SC-59, SOT-23-3
pin_count3
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo50V
Transition Frequency ft100MHz
Power Dissipation Pd330mW
DC Collector Current500mA
DC Current Gain hFE70hFE
Transistor Case StyleSOT-23
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification StandardAEC-Q101
MSL-
SVHCNo SVHC (12-Jan-2017)
Av Current Ic500mA
Collector Emitter Saturation Voltage Vce(on)300mV
Continuous Collector Current Ic Max500mA
Current Ic Continuous a Max500mA
Current Ic hFE5mA
Full Power Rating Temperature79°C
Gain Bandwidth ft Typ100MHz
Hfe Min70
Hfe Typ70
No. of Transistors1
PackagingCut Tape
Pin Format1B, 2E, 3C
Power Dissipation Ptot Max330mW
Resistance R11kohm
Resistance R210kohm
SMD MarkingXGs
Termination TypeSurface Mount Device
Transistor TypeBias Resistor (BRT)
Voltage Vcbo50V
Voltage Vi on12V
Voltage Vi on @ Ic 2mA0.4V
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