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TRANSISTOR, JFET, N, TO-92; Transistor Type:JFET; Breakdown Voltage Vbr:-30V; Zero Gate Voltage Drain Current Idss:12mA to 25mA; Gate-Source Cutoff Voltage Vgs(off) Max:8V; Power Dissipation Pd:350mW; Transistor Case Style:TO-92; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Application Code:HFA; Current Idss Max:25mA; Current Idss Min:12mA; Current Ig:10mA; Device Marking:BF245C; Drain Source Voltage Vds:30V; Forward Transconductance Gfs Max:6.5mA/V; Full Power Rating Temperature:25°C; Gfs Min:3mA/V; No. of Transistors:1; Operating Frequency Range:1MHz to 500MHz; Package / Case:TO-92; Pin Configuration:r; Pin Format:r; Power Dissipation Pd:350mW; Power Dissipation Ptot Max:350mW; Termination Type:Through Hole; Transistor Polarity:N Channel
Вес | 0.0002 кг |
Количество в упаковке | 1 |
Transistor Type | JFET |
Breakdown Voltage Vbr | -30V |
Zero Gate Voltage Drain Current Idss Min | 12mA |
Zero Gate Voltage Drain Current Idss Max | 25mA |
Gate-Source Cutoff Voltage Vgs(off) Max | 8V |
Transistor Case Style | TO-92 |
No. of Pins | 3 |
Operating Temperature Max | 150°C |
MSL | MSL 1 - Unlimited |
SVHC | No SVHC (17-Dec-2014) |
Application Code | HFA |
Current Idss Max | 25mA |
Current Idss Min | 12mA |
Current Ig | 10mA |
Device Marking | BF245C |
Drain Source Voltage Vds | 30V |
Forward Transconductance Gfs Max | 6.5mA/V |
Full Power Rating Temperature | 25°C |
Gfs Min | 3mA/V |
No. of Transistors | 1 |
Operating Frequency Range | 1MHz to 500MHz |
Pin Configuration | r |
Pin Format | r |
Power Dissipation Pd | 350mW |
Power Dissipation Ptot Max | 350mW |
Termination Type | Through Hole |
Transistor Polarity | N Channel |
Zero Gate Voltage Drain Current Idss | 12mA to 25mA |
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