• BF245C
  • BF245C
  • BF245C
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TRANSISTOR, JFET, N, TO-92; Transistor Type:JFET; Breakdown Voltage Vbr:-30V; Zero Gate Voltage Drain Current Idss:12mA to 25mA; Gate-Source Cutoff Voltage Vgs(off) Max:8V; Power Dissipation Pd:350mW; Transistor Case Style:TO-92; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Application Code:HFA; Current Idss Max:25mA; Current Idss Min:12mA; Current Ig:10mA; Device Marking:BF245C; Drain Source Voltage Vds:30V; Forward Transconductance Gfs Max:6.5mA/V; Full Power Rating Temperature:25°C; Gfs Min:3mA/V; No. of Transistors:1; Operating Frequency Range:1MHz to 500MHz; Package / Case:TO-92; Pin Configuration:r; Pin Format:r; Power Dissipation Pd:350mW; Power Dissipation Ptot Max:350mW; Termination Type:Through Hole; Transistor Polarity:N Channel

Вес0.0002 кг
Количество в упаковке1
Transistor TypeJFET
Breakdown Voltage Vbr-30V
Zero Gate Voltage Drain Current Idss Min12mA
Zero Gate Voltage Drain Current Idss Max25mA
Gate-Source Cutoff Voltage Vgs(off) Max8V
Transistor Case StyleTO-92
No. of Pins3
Operating Temperature Max150°C
MSLMSL 1 - Unlimited
SVHCNo SVHC (17-Dec-2014)
Application CodeHFA
Current Idss Max25mA
Current Idss Min12mA
Current Ig10mA
Device MarkingBF245C
Drain Source Voltage Vds30V
Forward Transconductance Gfs Max6.5mA/V
Full Power Rating Temperature25°C
Gfs Min3mA/V
No. of Transistors1
Operating Frequency Range1MHz to 500MHz
Pin Configurationr
Pin Formatr
Power Dissipation Pd350mW
Power Dissipation Ptot Max350mW
Termination TypeThrough Hole
Transistor PolarityN Channel
Zero Gate Voltage Drain Current Idss12mA to 25mA
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