• BFD82
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MOSFET, N, TO-3; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:500V; Current, Id Cont:14.5A; On State Resistance:0.4ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-3; Termination Type:Through Hole; Alternate Case Style:TO-204AA; Current Temperature:25°C; Current, Idm Pulse:58A; Fixing Centres:30mm; Full Power Rating Temperature:25°C; Lead Spacing:11mm; No. of Pins:2; No. of Transistors:1; Power Dissipation:198W; Power Dissipation Pd:198W; Voltage, Vds Max:500V; Transistor Case Style:TO-3

Transistor PolarityN Channel
Continuous Drain Current Id14.5A
Drain Source Voltage Vds500V
On Resistance Rds(on)400mohm
Rds(on) Test Voltage Vgs10V
Threshold Voltage Vgs4V
Power Dissipation Pd198W
Transistor Case StyleTO-3
No. of Pins2Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSL-
SVHCNo SVHC (07-Jul-2017)
Alternate Case StyleTO-204AA
Current Id Max14.5A
Current Temperature25°C
Fixing Centres30mm
Full Power Rating Temperature25°C
Lead Spacing11mm
No. of Transistors1
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +150°C
Pulse Current Idm58A
Termination TypeThrough Hole
Voltage Vds Typ500V
Voltage Vgs Max30V
Voltage Vgs Rds on Measurement10V
polarityN-Channel
id_continuous_drain_current14.5 A
pin_count2
reach_svhc_complianceNo SVHC
rohs_statusCompliant
mounting_styleThrough Hole
power_dissipation198 W
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