• BFP420H6327
  • BFP420H6327
  • BFP420H6327
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NPN Silicon RF Transistor for high gain low noise amplifiers | Summary of Features: For high gain low noise amplifiers; For oscillators up to 10 GHz; Noise figure F = 1.1 dB at 1.8 GHz outstanding Gms = 21 dB at 1.8 GHz; Transition frequency fT = 25 GHz; Gold metallization for high reliability; SIEGET 25 GHz fT - Line; Pb-free (RoHS compliant) package; Qualification report according to AEC-Q101 available | | Target Applications: Wireless Communications; For active mixer, amplifier and oscillator applications in RF Front-end

Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo4.5V
Transition Frequency ft25GHz
Power Dissipation Pd160mW
DC Collector Current35mA
DC Current Gain hFE95hFE
RF Transistor CaseSOT-343
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (12-Jan-2017)
Associated Gain Ga21dB
Av Current Ic35mA
Continuous Collector Current Ic35mA
Continuous Collector Current Ic Max30mA
Current Ic @ Gms20mA
Current Ic Continuous a Max30mA
Current Ic Fc Measurement5mA
Current Ic hFE20mA
Gain Bandwidth ft Min20GHz
Gain Bandwidth ft Typ25GHz
Gms20dB
Hfe Min50
No. of Transistors1
Noise Figure Typ1.1dB
Noise Level1.05dB
Operating Temperature Min-65°C
Operating Temperature Range-65°C to +150°C
Output @ Third Order Intercept Point IP322dB
PackagingCut Tape
Power @ 1dB Gain Compression, P1dB12dBm
Power Dissipation Ptot Max160mW
SMD MarkingAMs
polarityNPN
reach_svhc_complianceNo SVHC
rohs_statusCompliant
mounting_styleSurface Mount
packagingCut Tape (CT)
pin_count3
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