BFP843FH6327XTSA1

The BFP843F is a robust low noise broadband pre-matched bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board (e.g. AppNote AN300). | Summary of Features: Low noise broadband NPN RF transistor based on Infineons reliable, high volume SiGe:C bipolar technology High maximum RF input power and ESD robustness 20 dBm maximum RF input power, 1.5 KV HBM ESD hardness Unique combination of high RF performance, robustness and ease of application circuit design Low noise figure: NFmin = 0.95 dB at 2.4 GHz and 1.1 dB at 5.5 GHz, 1.8 V, 8 mA High gain |S21|2 = 21.5 dB at 2.4 GHz and 16.5 dB at 5.5 GHz, 1.8 V, 15 mA OIP3 = 22.5 dBm at 2.4 GHz and 20 dBm at 5.5 GHz, 1.8 V, 15 mA Ideal for low voltage applications e.g. VCC = 1.2 V and 1.8 V (2.85 V, 3.3 V, 3.6 V requires corresponding collector resistor) Low power consumption, ideal for mobile applications Thin small flat Pb-free (RoHS compliant) and halogen-free package with visible leads Qualification report according to AEC-Q101 available | |

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