Срок доставки – по запросу | Указанная цена является ориентировочной | 5,21 ₽ от 1 шт. |
This N-channel enhancement mode field effect transistor is produced using high cell density, trench MOSFET technology.This product minimizes on-state resistance while providing rugged, reliable, and fast switching performance. This product is particularly suited for low-voltage, lowcurrent applications such as small servo motor control, power MOSFET gate drivers, logic level translator, high speed line drivers, power management/power supply and switching applications.
| polarity | N-Channel |
| rohs_status | Compliant |
| mounting_style | Surface Mount |
| Transistor Polarity | N Channel |
| Continuous Drain Current Id | 200mA |
| Drain Source Voltage Vds | 50V |
| On Resistance Rds(on) | 2.78ohm |
| Rds(on) Test Voltage Vgs | 5V |
| Threshold Voltage Vgs | 1.25V |
| Power Dissipation Pd | 350mW |
| Transistor Case Style | SOT-23 |
| No. of Pins | 3Pins |
| Operating Temperature Max | 150°C |
| Product Range | - |
| Automotive Qualification Standard | - |
| MSL | - |
| SVHC | No SVHC (15-Jun-2015) |
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