BSS84P

MOSFET, P, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:170mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):8ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.5V; Power Dissipation Pd:360mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Avalanche Single Pulse Energy Eas:2.6mJ; Capacitance Ciss Typ:19pF; Current Id Max:170mA; Current Idss Max:1µA; Current Temperature:25°C; Device Marking:YBs; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Fall Time tf:34ns; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; On State Resistance @ Vgs = 4.5V:12ohm; On State resistance @ Vgs = 10V:8ohm; Package / Case:SOT-23; Power Dissipation Pd:360mW; Power Dissipation Pd:360mW; Power Dissipation Ptot Max:360mW; Pulse Current Idm:680mA; Rate of Voltage Change dv / dt:6kV/µs

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