• BUZ906
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Цена – по запросу
итого  цена по запросу

MOSFET, P, TO-3; Transistor Polarity:P Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:200V; On Resistance Rds(on):1.5ohm; Threshold Voltage Vgs Typ:-1.5V; Power Dissipation Pd:125W; Transistor Case Style:TO-3; No. of Pins:2; SVHC:No SVHC (19-Dec-2011); Current Id Max:8A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-3; Power Dissipation Pd:125W; Power Dissipation Pd:125W; Termination Type:Through Hole; Voltage Vds Typ:-200V; Voltage Vgs Max:-1.5V

Transistor PolarityP Channel
Continuous Drain Current Id8A
Drain Source Voltage Vds-200V
On Resistance Rds(on)1.5ohm
Rds(on) Test Voltage Vgs-
Threshold Voltage Vgs-1.5V
Power Dissipation Pd125W
Transistor Case StyleTO-3
No. of Pins2Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSL-
SVHCNo SVHC (07-Jul-2017)
Current Id Max8A
Current Temperature25°C
Full Power Rating Temperature25°C
No. of Transistors1
Termination TypeThrough Hole
Voltage Vds Typ-200V
Voltage Vgs Max-1.5V
polarityP-Channel
id_continuous_drain_current8.00 A
power_dissipation125 W
vds_drain_to_source_voltage-200 V
reach_svhc_complianceNo SVHC
breakdown_voltage_drain_to_source200 V
mounting_styleThrough Hole
rohs_statusCompliant
pin_count2
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