BZX79-B13,133

ATT.NUM.P_TOT: 400 mW; Configuration: 1 diode; Diode type (category): Zener diode; Enclosure type (semiconductors): Axial; Forward voltage U(F): 900 mV; Forward voltage reference: 10 mA; Impedance (num.): 30 Ω; Impedance reference: 5 mA; Manufacturer: NXP Semiconductors; Manufacturer code (components): NXP; Mounting type: Through-hole; Operating temperature (max.) (num): +150 °C; Operating temperature (min.) (num): -65 °C; Residual reverse leakage current: 100 nA; Residual reverse leakage current reference: 8 V; Type (manufacturer type): BZX79-B13,133; Zener voltage: 13 V; Zener voltage (max.): 13.3 V; Zener voltage (min.): 12.7 V; Zener voltage tolerance: +2 %, -2 %

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